FDB3632_SB82115
FDB3632_SB82115
Part Number:
FDB3632_SB82115
Manufacturer:
ON Semiconductor
Description:
INTEGRATED CIRCUIT
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
80515 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
FDB3632_SB82115.pdf

Introduction

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Specifications

Internal Part Number RO-FDB3632_SB82115
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:9 mOhm @ 80A, 10V
Power Dissipation (Max):310W (Tc)
Packaging:Bulk
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:6000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
Email:[email protected]

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