SIHB12N65E-GE3
SIHB12N65E-GE3
Artikelnummer:
SIHB12N65E-GE3
Tillverkare:
Vishay / Siliconix
Beskrivning:
MOSFET N-CH 650V 12A D2PAK
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
57274 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
SIHB12N65E-GE3.pdf

Introduktion

We can supply SIHB12N65E-GE3, use the request quote form to request SIHB12N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB12N65E-GE3.The price and lead time for SIHB12N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB12N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-SIHB12N65E-GE3
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Spänning - Test:1224pF @ 100V
Spänning - Uppdelning:D²PAK (TO-263)
Vgs (th) (Max) @ Id:380 mOhm @ 6A, 10V
Teknologi:MOSFET (Metal Oxide)
Serier:-
RoHS-status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:12A (Tc)
Polarisering:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:19 Weeks
Tillverkarens varunummer:SIHB12N65E-GE3
Inputkapacitans (Ciss) (Max) @ Vds:70nC @ 10V
Gate Laddning (Qg) (Max) @ Vgs:4V @ 250µA
FET-funktionen:N-Channel
Utvidgad beskrivning:N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)
Avlopp till källspänning (Vdss):-
Beskrivning:MOSFET N-CH 650V 12A D2PAK
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:650V
Kapacitansförhållande:156W (Tc)
Email:[email protected]

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