SI4058DY-T1-GE3
Artikelnummer:
SI4058DY-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 100V 10.3A 8SOIC
Antal i lager:
83671 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
SI4058DY-T1-GE3.pdf

Introduktion

We can supply SI4058DY-T1-GE3, use the request quote form to request SI4058DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4058DY-T1-GE3.The price and lead time for SI4058DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4058DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-SI4058DY-T1-GE3
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:2.8V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:8-SOIC
Serier:-
Rds On (Max) @ Id, Vgs:26 mOhm @ 10A, 10V
Effektdissipation (Max):5.6W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:8-SOIC (0.154", 3.90mm Width)
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Inputkapacitans (Ciss) (Max) @ Vds:690pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:18nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):100V
detaljerad beskrivning:N-Channel 100V 10.3A (Tc) 5.6W (Tc) Surface Mount 8-SOIC
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:10.3A (Tc)
Email:[email protected]

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