GP2M002A060PG
GP2M002A060PG
Artikelnummer:
GP2M002A060PG
Tillverkare:
Global Power Technologies Group
Beskrivning:
MOSFET N-CH 600V 2A
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
75904 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
GP2M002A060PG.pdf

Introduktion

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Specifikationer

Internt delnummer RO-GP2M002A060PG
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:I-PAK
Serier:-
Rds On (Max) @ Id, Vgs:4 Ohm @ 1A, 10V
Effektdissipation (Max):52.1W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:TO-251-3 Short Leads, IPak, TO-251AA
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:360pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:9nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):600V
detaljerad beskrivning:N-Channel 600V 2A (Tc) 52.1W (Tc) Through Hole I-PAK
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:2A (Tc)
Email:[email protected]

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