GP1M009A060FH
GP1M009A060FH
Artikelnummer:
GP1M009A060FH
Tillverkare:
Global Power Technologies Group
Beskrivning:
MOSFET N-CH 600V 9A TO220F
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
53885 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
GP1M009A060FH.pdf

Introduktion

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Specifikationer

Internt delnummer RO-GP1M009A060FH
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-220F
Serier:-
Rds On (Max) @ Id, Vgs:1 Ohm @ 4.5A, 10V
Effektdissipation (Max):51.4W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:TO-220-3 Full Pack
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1440pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:27nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):600V
detaljerad beskrivning:N-Channel 600V 9A (Tc) 51.4W (Tc) Through Hole TO-220F
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:9A (Tc)
Email:[email protected]

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