TH58BYG2S3HBAI6
TH58BYG2S3HBAI6
Onderdeel nummer:
TH58BYG2S3HBAI6
Fabrikant:
Toshiba Memory America, Inc.
Beschrijving:
IC FLASH 4G PARALLEL 67VFBGA
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
47847 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
TH58BYG2S3HBAI6.pdf

Invoering

We can supply TH58BYG2S3HBAI6, use the request quote form to request TH58BYG2S3HBAI6 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TH58BYG2S3HBAI6.The price and lead time for TH58BYG2S3HBAI6 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TH58BYG2S3HBAI6.We look forward to working with you to establish long-term relations of cooperation

bestek

Intern onderdeelnummer RO-TH58BYG2S3HBAI6
Staat Original New
Land van oorsprong Contact us
Top Markering email us
Vervanging See datasheet
Schrijf cyclus tijd - woord, pagina:25ns
Voltage - Levering:1.7 V ~ 1.95 V
Technologie:FLASH - NAND (SLC)
Leverancier Device Pakket:67-VFBGA (6.5x8)
Serie:Benand™
Packaging:Tray
Verpakking / doos:67-VFBGA
Andere namen:TH58BYG2S3HBAI6JDH
TH58BYG2S3HBAI6YCL
Temperatuur:-40°C ~ 85°C (TA)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):3 (168 Hours)
geheugen:Non-Volatile
Geheugen grootte:4Gb (512M x 8)
Geheugeninterface:Parallel
Geheugenformaat:FLASH
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
gedetailleerde beschrijving:FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8)
Access Time:25ns
Email:[email protected]

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