Intern onderdeelnummer | RO-SIHD5N50D-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
Voltage - Test: | 325pF @ 100V |
Voltage - Breakdown: | TO-252AA |
VGS (th) (Max) @ Id: | 1.5 Ohm @ 2.5A, 10V |
Technologie: | MOSFET (Metal Oxide) |
Serie: | - |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, VGS: | 5.3A (Tc) |
Polarisatie: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andere namen: | SIHD5N50D-GE3TR SIHD5N50DGE3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Onderdeelnummer: | SIHD5N50D-GE3 |
Input Capacitance (Ciss) (Max) @ Vds: | 20nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 5V @ 250µA |
FET Feature: | N-Channel |
Uitgebreide beschrijving: | N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount TO-252AA |
Drain naar de Bron Voltage (Vdss): | - |
Beschrijving: | MOSFET N-CH 500V 5.3A TO252 DPK |
Current - Continuous Drain (Id) @ 25 ° C: | 500V |
capacitieve Ratio: | 104W (Tc) |
Email: | [email protected] |