Intern onderdeelnummer | RO-SI6423DQ-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
Voltage - Test: | - |
Voltage - Breakdown: | 8-TSSOP |
VGS (th) (Max) @ Id: | 8.5 mOhm @ 9.5A, 4.5V |
Vgs (Max): | 1.8V, 4.5V |
Technologie: | MOSFET (Metal Oxide) |
Serie: | TrenchFET® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, VGS: | 8.2A (Ta) |
Polarisatie: | 8-TSSOP (0.173", 4.40mm Width) |
Andere namen: | SI6423DQ-T1-GE3TR SI6423DQT1GE3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 15 Weeks |
Fabrikant Onderdeelnummer: | SI6423DQ-T1-GE3 |
Input Capacitance (Ciss) (Max) @ Vds: | 110nC @ 5V |
IGBT Type: | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 800mV @ 400µA |
FET Feature: | P-Channel |
Uitgebreide beschrijving: | P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
Drain naar de Bron Voltage (Vdss): | - |
Beschrijving: | MOSFET P-CH 12V 8.2A 8-TSSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 12V |
capacitieve Ratio: | 1.05W (Ta) |
Email: | [email protected] |