Intern onderdeelnummer | RO-SI5855DC-T1-E3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 1V @ 250µA |
Vgs (Max): | ±8V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 1206-8 ChipFET™ |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 110 mOhm @ 2.7A, 4.5V |
Vermogensverlies (Max): | 1.1W (Ta) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | 8-SMD, Flat Lead |
Andere namen: | SI5855DC-T1-E3TR SI5855DCT1E3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4.5V |
FET Type: | P-Channel |
FET Feature: | Schottky Diode (Isolated) |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 1.8V, 4.5V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | P-Channel 20V 2.7A (Ta) 1.1W (Ta) Surface Mount 1206-8 ChipFET™ |
Current - Continuous Drain (Id) @ 25 ° C: | 2.7A (Ta) |
Email: | [email protected] |