Intern onderdeelnummer | RO-SI4910DY-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2V @ 250µA |
Leverancier Device Pakket: | 8-SO |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 27 mOhm @ 6A, 10V |
Vermogen - Max: | 3.1W |
Packaging: | Original-Reel® |
Verpakking / doos: | 8-SOIC (0.154", 3.90mm Width) |
Andere namen: | SI4910DY-T1-GE3DKR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 855pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 7.6A |
Base Part Number: | SI4910 |
Email: | [email protected] |