Intern onderdeelnummer | RO-SI2399DS-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 1.5V @ 250µA |
Vgs (Max): | ±12V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | SOT-23-3 (TO-236) |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 34 mOhm @ 5.1A, 10V |
Vermogensverlies (Max): | 1.25W (Ta), 2.5W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-236-3, SC-59, SOT-23-3 |
Andere namen: | SI2399DS-T1-GE3-ND SI2399DS-T1-GE3TR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 835pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 2.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | P-Channel 20V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) |
Current - Continuous Drain (Id) @ 25 ° C: | 6A (Tc) |
Email: | [email protected] |