Intern onderdeelnummer | RO-IRF6604TR1 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2.1V @ 250µA |
Vgs (Max): | ±12V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DIRECTFET™ MQ |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 11.5 mOhm @ 12A, 7V |
Vermogensverlies (Max): | 2.3W (Ta), 42W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | DirectFET™ Isometric MQ |
Andere namen: | SP001525412 |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 3 (168 Hours) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 2270pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 7V |
Drain naar de Bron Voltage (Vdss): | 30V |
gedetailleerde beschrijving: | N-Channel 30V 12A (Ta), 49A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ |
Current - Continuous Drain (Id) @ 25 ° C: | 12A (Ta), 49A (Tc) |
Email: | [email protected] |