Intern onderdeelnummer | RO-IRF6609 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2.45V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DIRECTFET™ MT |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 2 mOhm @ 31A, 10V |
Vermogensverlies (Max): | 1.8W (Ta), 89W (Tc) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | DirectFET™ Isometric MT |
Andere namen: | *IRF6609 IRF6609CT |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 3 (168 Hours) |
Loodvrije status / RoHS-status: | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 6290pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | N-Channel 20V 31A (Ta), 150A (Tc) 1.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT |
Current - Continuous Drain (Id) @ 25 ° C: | 31A (Ta), 150A (Tc) |
Email: | [email protected] |