EPC2100ENG
EPC2100ENG
Onderdeel nummer:
EPC2100ENG
Fabrikant:
EPC
Beschrijving:
TRANS GAN 2N-CH 30V BUMPED DIE
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
39905 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
EPC2100ENG.pdf

Invoering

We can supply EPC2100ENG, use the request quote form to request EPC2100ENG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2100ENG.The price and lead time for EPC2100ENG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2100ENG.We look forward to working with you to establish long-term relations of cooperation

bestek

Intern onderdeelnummer RO-EPC2100ENG
Staat Original New
Land van oorsprong Contact us
Top Markering email us
Vervanging See datasheet
VGS (th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
Leverancier Device Pakket:Die
Serie:eGaN®
Rds On (Max) @ Id, VGS:8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vermogen - Max:-
Packaging:Tray
Verpakking / doos:Die
Andere namen:917-EPC2100ENG
EPC2100ENGR_H1
EPC2100ENGRH1
Temperatuur:-40°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain naar de Bron Voltage (Vdss):30V
gedetailleerde beschrijving:Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25 ° C:10A (Ta), 40A (Ta)
Email:[email protected]

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