Beijing, November 10, 2020 - Texas Instruments (TI) today launched the next-generation 650V and 600V gallium nitride (GaN) field effect transistors (FET) for automotive and industrial applications, further enriching and expanding its high-voltage power management products line. Compared with existing solutions, the new GaN FET series uses a fast-switching 2.2 MHz integrated gate driver, which can help engineers provide twice the power density and up to 99% efficiency, and reduce the size of power magnetic devices by 59% . TI has developed a new type of FET with its unique GaN material and processing capabilities on a silicon (Si)-based gallium nitride substrate, which has more cost and supply chain advantages than similar substrate materials such as silicon carbide (SiC) . For more information, please log inwww.ti.com.cn/LMG3425R030-pr-cnwithwww.ti.com.cn/LMG3525R030-Q1-pr-cnView.

Electrification is changing the automotive industry, and consumers increasingly demand vehicles with faster charging and longer range. Therefore, engineers urgently need to design a more compact and lighter car system without affecting the performance of the car. Compared with existing Si or SiC solutions, the use of TI’s new automotive GaN FETs can reduce the size of electric vehicle (EV) on-board chargers and DC/DC converters by up to 50%, allowing engineers to extend batteries Endurance, improve system reliability and reduce design costs. In industrial design, these new devices can achieve higher performance in AC/DC power transmission applications (such as ultra-large-scale enterprise computing platforms and 5G telecom rectifiers) with lower power consumption and smaller circuit board space occupation. Efficiency and power density.

Asif Anwar, Director of Powertrain, Body, Chassis and Safety Services at Strategy Analytics, said: "GaN and other wide band gap semiconductor technologies have undoubtedly brought more stable performance to power electronic equipment (especially high-voltage systems). Texas Instruments has experienced more than ten years The investment and development of the company provide a unique overall solution-combining the production and packaging of internal GaN-on-Si devices with optimized silicon-based driver technology, which can be used in new applications Successfully adopted GaN."

Steve Lambouses, Vice President of Texas Instruments High Voltage Power Solutions, said: "Industrial and automotive applications increasingly require more power in a smaller space. Designers must provide a power management system that can reliably operate over the long life cycle of the terminal device. With more than 40 million hours of device reliability testing and more than 5 GWh of power conversion application testing, TI’s GaN technology provides engineers with reliable full life cycle guarantees that can meet any market demand."

Double the power density with fewer devices

In high-voltage, high-density applications, minimizing board space is an important design goal. As electronic systems become smaller and smaller, their internal components must continue to shrink and become more compact. TI’s new GaN FET integrates fast switching drivers and internal protection and temperature sensing functions, enabling engineers to reduce board size and power consumption while achieving high performance in power management designs. This integration, coupled with the high power density of TI's GaN technology, enables engineers to reduce more than 10 components in the usual discrete solution. In addition, when applied in a half-bridge configuration, each new 30mΩ FET can support up to 4 kW of power conversion.

createTIHigher power factor correction (PFC)effectiveness

GaN has the advantage of fast switching, enabling a smaller, lighter, and more efficient power system. In the past, to obtain fast switching performance, there would be higher power losses. In order to avoid such adverse consequences, the new GaN FET uses TI's intelligent dead zone adaptive function to reduce power loss. For example, in PFC, the intelligent dead zone adaptive function can reduce the third quadrant loss by up to 66% compared to discrete GaN and SiC metal oxide silicon FETs (MOSFETs). The intelligent dead zone adaptive function also eliminates the need to control the adaptive dead time, thereby reducing firmware complexity and development time. For more information, please read the application note" Maximize GaN performance through intelligent dead zone adaptive function".

Greater improvementThermal performance

Packaged products using TI GaN FETs have a thermal impedance 23% lower than similar products with the closest performance. This allows engineers to use smaller heat sinks while simplifying heat dissipation design.Regardless of the application scenario, these new devices can provide greater flexibility in thermal design, and can choose bottom or top cooling packages.In addition, the FET's integrated digital temperature reporting function can also implement active power management, allowing engineers to optimize the thermal performance of the system under varying loads and operating conditions.