Expert NEXPERIA in the field of basic semiconductor components, today announced the launch of 650V, 10A SiC Schottky diode, officially entered the high-power silicon carbide (SiC) diode market. This is a strategic initiative to expand high-pressure wide-guided semiconductor device products for high-efficiency power gallium nitride (GaN) FETs.

Nexperia's first SiC Schottky diode is an industrial grade device. Repeat the reverse peak voltage of 650V (VRRM), continuous forward current is 10A (IF), intended to achieve ultra-high performance, high efficiency, low power conversion application loss. And a pure double pin (R2P) package having a higher creepage distance to make this series of diodes (DPAK R2P and D2PAK R2P) or through-hole (TO-220-2, TO-247) -2) Device. Engineering samples are now available and is planned to release complete products in the second quarter of 2022. The Nexperia program continuously expands the SiC diode product portfolio, which is expected to launch a total of 72 products working at 650V and 1200V voltages, 6-20A current range.

As people's energy awareness is increasing, the demand for high power applications with excellent efficiency and power density is increasingly strong. In this regard, silicon will soon reach the physical limit. Mark Roeloffzen, general manager of Nexperia bipolar discrete device, said: "Such as gallium nitride and silicon carbide equivalent semiconductors are now able to meet the stringent requirements of massive applications, bringing higher efficiency for original equipment manufacturers. And power density, reduce system costs and operating costs. Nexperia's extensive SiC diode product portfolio will bring more choices and conveniences to the market. "

The initial target market of Nexperia's SiC Schottky diode is industrial and consumer applications, including:

· Switch mode power supply (SMPS)

· AC-DC and DC-DC converters

· Battery charging infrastructure

· Uninterruptible power supply (UPS)

· Photovoltaic inverter

Nexperia also plans to release a model device for vehicle electrification applications, such as:

· Car charger (OBC)

· Inverter

· High voltage DC-DC converter

SiC Schottky diode product combination pushes PSC1065H (-J / -K / -L), which is developed by Nexperia to meet the needs of automobile and industrial markets, if you need to understand more information of new PSC1065x (including product specifications and Data manual), please visit www.nexperia.com/sic_diodes