EPC8009ENGR
EPC8009ENGR
Part Number:
EPC8009ENGR
Manufacturer:
EPC
Description:
TRANS GAN 65V 4.1A BUMPED DIE
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
85010 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
1.EPC8009ENGR.pdf2.EPC8009ENGR.pdf

Introduction

ROGER-TECH is the stocking distributor for EPC8009ENGR, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC8009ENGR by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-EPC8009ENGR
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Voltage - Test:47pF @ 32.5V
Voltage - Breakdown:Die
Vgs(th) (Max) @ Id:138 mOhm @ 500mA, 5V
Technology:GaNFET (Gallium Nitride)
Series:eGaN®
RoHS Status:Tray
Rds On (Max) @ Id, Vgs:4.1A (Ta)
Polarization:Die
Other Names:917-EPC8009ENGR
EPC8009ENGG
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:EPC8009ENGR
Input Capacitance (Ciss) (Max) @ Vds:0.38nC @ 5V
Gate Charge (Qg) (Max) @ Vgs:2.5V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 65V 4.1A (Ta) Surface Mount Die
Drain to Source Voltage (Vdss):-
Description:TRANS GAN 65V 4.1A BUMPED DIE
Current - Continuous Drain (Id) @ 25°C:65V
Capacitance Ratio:-
Email:[email protected]

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