Italia
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Suomi Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Svenska Ελλάδα Български език✕
Su di noi | Contatto | Richiedi un preventivo |
Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXFN300N10P
IXFN300N10P
IXFN300N10P
Modello di prodotti:
IXFN300N10P
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 100V 295A SOT-227
Stato RoHS:
Senza piombo / RoHS conforme
Quantità in magazzino:
84760 Pieces
Tempo di consegna:
1-2 days (We have stocks to ship now)
Tempi di produzione:
4-8 weeks
Scheda dati:
IXFN300N10P.pdf
Inchiesta

introduzione

We can supply IXFN300N10P, use the request quote form to request IXFN300N10P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFN300N10P.The price and lead time for IXFN300N10P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFN300N10P.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Numero di parte interno RO-IXFN300N10P
Condizione Original New
Paese di origine Contact us
Contrassegno superiore email us
Sostituzione See datasheet
Vgs (th) (max) a Id:5V @ 8mA
Vgs (Max):±20V
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:SOT-227B
Serie:Polar™
Rds On (max) a Id, Vgs:5.5 mOhm @ 50A, 10V
Dissipazione di potenza (max):1070W (Tc)
imballaggio:Tube
Contenitore / involucro:SOT-227-4, miniBLOC
temperatura di esercizio:-55°C ~ 175°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:24 Weeks
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:23000pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:279nC @ 10V
Tipo FET:N-Channel
Caratteristica FET:-
Tensione dell'azionamento (Max Rds On, Min Rds On):10V
Tensione drain-source (Vdss):100V
Descrizione dettagliata:N-Channel 100V 295A (Tc) 1070W (Tc) Chassis Mount SOT-227B
Corrente - Drain continuo (Id) @ 25 ° C:295A (Tc)
Email:[email protected]

Richiesta rapida citazione

Modello di prodotti
Quantità
Azienda
E-mail
Numero di telefono
Note / Commenti

Parti relative per IXFN300N10P

Immagine Modello di prodotti Produttori Descrizione vista
IXFN340N06 Image IXFN340N06 IXYS Corporation MOSFET N-CH 60V 340A SOT-227B Inchiesta
IXFN27N80 Image IXFN27N80 IXYS Corporation MOSFET N-CH 800V 27A SOT-227B Inchiesta
IXFN26N90 Image IXFN26N90 IXYS Corporation MOSFET N-CH 900V 26A SOT-227B Inchiesta
IXFN32N100P Image IXFN32N100P IXYS Corporation MOSFET N-CH 1000V 27A SOT-227B Inchiesta
IXFN280N07 Image IXFN280N07 IXYS Corporation MOSFET N-CH 70V 280A SOT-227B Inchiesta
IXFN25N90 Image IXFN25N90 IXYS Corporation MOSFET N-CH 900V 25A SOT-227B Inchiesta
IXFN32N80P Image IXFN32N80P IXYS MOSFET N-CH 800V 29A SOT-227B Inchiesta
IXFN30N110P Image IXFN30N110P IXYS Corporation MOSFET N-CH 1100V 25A SOT-227B Inchiesta
IXFN26N100P Image IXFN26N100P IXYS Corporation MOSFET N-CH 1000V 23A SOT-227B Inchiesta
IXFN30N120P Image IXFN30N120P IXYS Corporation MOSFET N-CH 1200V 30A SOT-227B Inchiesta
IXFN32N60 Image IXFN32N60 IXYS Corporation MOSFET N-CH 600V 32A SOT-227 Inchiesta
IXFN320N17T2 Image IXFN320N17T2 IXYS Corporation MOSFET N-CH 170V 260A SOT227 Inchiesta
IXFN32N100Q3 Image IXFN32N100Q3 IXYS Corporation MOSFET N-CH 1000V 28A SOT-227 Inchiesta
IXFN24N90Q Image IXFN24N90Q IXYS Corporation MOSFET N-CH 900V 24A SOT-227B Inchiesta
IXFN26N120P Image IXFN26N120P IXYS Corporation MOSFET N-CH 1200V 23A SOT-227B Inchiesta
IXFN260N17T Image IXFN260N17T IXYS Corporation MOSFET N-CH 170V 245A SOT-227 Inchiesta
IXFN27N80Q Image IXFN27N80Q IXYS Corporation MOSFET N-CH 800V 27A SOT-227B Inchiesta
IXFN32N120P Image IXFN32N120P IXYS Corporation MOSFET N-CH 1200V 32A SOT-227B Inchiesta
IXFN280N085 Image IXFN280N085 IXYS Corporation MOSFET N-CH 85V 280A SOT-227B Inchiesta
IXFN300N20X3 Image IXFN300N20X3 IXYS Corporation 200V/300A ULTRA JUNCTION X3-CLAS Inchiesta

Latest Notizie