TC58NVG2S0HBAI6
TC58NVG2S0HBAI6
Nomor bagian:
TC58NVG2S0HBAI6
Pabrikan:
Toshiba Memory America, Inc.
Deskripsi:
IC FLASH 4G PARALLEL 67VFBGA
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
69766 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
TC58NVG2S0HBAI6.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-TC58NVG2S0HBAI6
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Tulis Siklus Waktu - Kata, Halaman:25ns
Tegangan - Pasokan:2.7 V ~ 3.6 V
Teknologi:FLASH - NAND (SLC)
Paket Perangkat pemasok:67-VFBGA (6.5x8)
Seri:-
Pengemasan:Tray
Paket / Case:67-VFBGA
Nama lain:TC58NVG2S0HBAI6JDH
TC58NVG2S0HBAI6YCL
Suhu Operasional:-40°C ~ 85°C (TA)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
memory Type:Non-Volatile
Ukuran memori:4Gb (512M x 8)
Antarmuka Memori:Parallel
Format Memori:FLASH
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Detil Deskripsi:FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8)
Waktu akses:25ns
Email:[email protected]

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