SI4103DY-T1-GE3
Nomor bagian:
SI4103DY-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET P-CHAN 30V SO-8
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
49058 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
SI4103DY-T1-GE3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-SI4103DY-T1-GE3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:8-SO
Seri:TrenchFET® Gen III
Rds Pada (Max) @ Id, Vgs:7.9 mOhm @ 10A, 10V
Power Disipasi (Max):2.5W (Ta), 5.2W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:8-SOIC (0.154", 3.90mm Width)
Nama lain:SI4103DY-GE3
SI4103DY-T1-GE3TR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:5200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:140nC @ 10V
FET Jenis:P-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:14A (Ta), 16A (Tc)
Email:[email protected]

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