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SI4103DY-T1-GE3
- Part Number:
- SI4103DY-T1-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET P-CHAN 30V SO-8
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 49058 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SI4103DY-T1-GE3.pdf
Introduction
Specifications
| Internal Part Number | RO-SI4103DY-T1-GE3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-SO |
| Series: | TrenchFET® Gen III |
| Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 10A, 10V |
| Power Dissipation (Max): | 2.5W (Ta), 5.2W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Other Names: | SI4103DY-GE3 SI4103DY-T1-GE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 32 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | P-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 16A (Tc) |
| Email: | [email protected] |
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