MB85R256GPF-G-BND-ERE1
Nomor bagian:
MB85R256GPF-G-BND-ERE1
Pabrikan:
Fujitsu Electronics America, Inc.
Deskripsi:
IC FRAM 256K PARALLEL 28SOP
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
38460 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
MB85R256GPF-G-BND-ERE1.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-MB85R256GPF-G-BND-ERE1
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Tulis Siklus Waktu - Kata, Halaman:150ns
Tegangan - Pasokan:2.7 V ~ 3.6 V
Teknologi:FRAM (Ferroelectric RAM)
Seri:-
Suhu Operasional:-40°C ~ 85°C (TA)
Moisture Sensitivity Level (MSL):3 (168 Hours)
memory Type:Non-Volatile
Ukuran memori:256Kb (32K x 8)
Antarmuka Memori:Parallel
Format Memori:FRAM
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Detil Deskripsi:FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns
Waktu akses:150ns
Email:[email protected]

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