GP1M008A080H
GP1M008A080H
Nomor bagian:
GP1M008A080H
Pabrikan:
Global Power Technologies Group
Deskripsi:
MOSFET N-CH 800V 8A TO220
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
88015 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
GP1M008A080H.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-GP1M008A080H
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-220
Seri:-
Rds Pada (Max) @ Id, Vgs:1.4 Ohm @ 4A, 10V
Power Disipasi (Max):250W (Tc)
Pengemasan:Tube
Paket / Case:TO-220-3
Nama lain:1560-1170-1
1560-1170-1-ND
1560-1170-5
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1921pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:46nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):800V
Detil Deskripsi:N-Channel 800V 8A (Tc) 250W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25 ° C:8A (Tc)
Email:[email protected]

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