Nomor Bagian Internal | RO-CPMF-1200-S160B |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | +25V, -5V |
Teknologi: | SiCFET (Silicon Carbide) |
Paket Perangkat pemasok: | Die |
Seri: | Z-FET™ |
Rds Pada (Max) @ Id, Vgs: | 220 mOhm @ 10A, 20V |
Power Disipasi (Max): | 202W (Tj) |
Pengemasan: | Bulk |
Paket / Case: | Die |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 928pF @ 800V |
Gate Charge (Qg) (Max) @ Vgs: | 47.1nC @ 20V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 20V |
Tiriskan untuk Sumber Tegangan (Vdss): | 1200V |
Detil Deskripsi: | N-Channel 1200V 28A (Tj) 202W (Tj) Surface Mount Die |
Current - Continuous Drain (Id) @ 25 ° C: | 28A (Tj) |
Email: | [email protected] |