Nomor Bagian Internal | RO-AOWF25S65 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | aMOS™ |
Rds Pada (Max) @ Id, Vgs: | 190 mOhm @ 12.5A, 10V |
Power Disipasi (Max): | 28W (Tc) |
Pengemasan: | Tube |
Paket / Case: | TO-262-3 Full Pack, I²Pak |
Nama lain: | 785-1530-5 AOWF25S65-ND |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1278pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 26.4nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 650V |
Detil Deskripsi: | N-Channel 650V 25A (Tc) 28W (Tc) Through Hole |
Current - Continuous Drain (Id) @ 25 ° C: | 25A (Tc) |
Email: | [email protected] |