Nomor Bagian Internal | RO-1N8030-GA |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tegangan - Forward (Vf) (Max) @ Jika: | 1.39V @ 750mA |
Tegangan - DC terbalik (Vr) (Max): | 650V |
Paket Perangkat pemasok: | TO-257 |
Kecepatan: | No Recovery Time > 500mA (Io) |
Seri: | - |
Sebaliknya Pemulihan Waktu (trr): | 0ns |
Pengemasan: | Tube |
Paket / Case: | TO-257-3 |
Nama lain: | 1242-1117 1N8030GA |
Suhu Operasional - Junction: | -55°C ~ 250°C |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 18 Weeks |
Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
diode Jenis: | Silicon Carbide Schottky |
Detil Deskripsi: | Diode Silicon Carbide Schottky 650V 750mA Through Hole TO-257 |
Saat ini - Reverse Kebocoran @ Vr: | 5µA @ 650V |
Saat ini - rata Rectified (Io): | 750mA |
Kapasitansi @ Vr, F: | 76pF @ 1V, 1MHz |
Nomor Bagian Dasar: | 1N8030 |
Email: | [email protected] |