Nomor Bagian Internal | RO-1N8033-GA |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tegangan - Puncak terbalik (Max): | Silicon Carbide Schottky |
Tegangan - Forward (Vf) (Max) @ Jika: | 4.3A (DC) |
Tegangan - Breakdown: | TO-276 |
Seri: | - |
Status RoHS: | Tube |
Sebaliknya Pemulihan Waktu (trr): | No Recovery Time > 500mA (Io) |
Resistance @ Jika, F: | 274pF @ 1V, 1MHz |
Polarisasi: | TO-276AA |
Nama lain: | 1242-1120 1N8033GA |
Suhu Operasional - Junction: | 0ns |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 18 Weeks |
Nomor Bagian Produsen: | 1N8033-GA |
Deskripsi yang Diperluas: | Diode Silicon Carbide Schottky 650V 4.3A (DC) Surface Mount TO-276 |
Konfigurasi diode: | 5µA @ 650V |
Deskripsi: | DIODE SCHOTTKY 650V 4.3A TO276 |
Saat ini - Reverse Kebocoran @ Vr: | 1.65V @ 5A |
Saat ini - rata Rectified (Io) (per Diode): | 650V |
Kapasitansi @ Vr, F: | -55°C ~ 250°C |
Email: | [email protected] |