W947D2HBJX5I TR
W947D2HBJX5I TR
Modèle de produit:
W947D2HBJX5I TR
Fabricant:
Winbond Electronics Corporation
La description:
IC DRAM 128M PARALLEL 90VFBGA
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
44288 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
W947D2HBJX5I TR.pdf

introduction

We can supply W947D2HBJX5I TR, use the request quote form to request W947D2HBJX5I TR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number W947D2HBJX5I TR.The price and lead time for W947D2HBJX5I TR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# W947D2HBJX5I TR.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-W947D2HBJX5I TR
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Écrire le temps de cycle - Word, Page:15ns
Tension - Alimentation:1.7 V ~ 1.95 V
La technologie:SDRAM - Mobile LPDDR
Package composant fournisseur:90-VFBGA (8x13)
Séries:-
Emballage:Tape & Reel (TR)
Package / Boîte:90-TFBGA
Autres noms:W947D2HBJX5I TR-ND
W947D2HBJX5ITR
Température de fonctionnement:-40°C ~ 85°C (TA)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Type de mémoire:Volatile
Taille mémoire:128Mb (4M x 32)
Interface mémoire:Parallel
Format de mémoire:DRAM
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Description détaillée:SDRAM - Mobile LPDDR Memory IC 128Mb (4M x 32) Parallel 200MHz 5ns 90-VFBGA (8x13)
Fréquence d'horloge:200MHz
Temps d'accès:5ns
Email:[email protected]

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