TPD3215M
TPD3215M
Modèle de produit:
TPD3215M
Fabricant:
Transphorm
La description:
CASCODE GAN HB 600V 70A MODULE
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
79372 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
TPD3215M.pdf

introduction

We can supply TPD3215M, use the request quote form to request TPD3215M pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPD3215M.The price and lead time for TPD3215M depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPD3215M.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-TPD3215M
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:-
Package composant fournisseur:Module
Séries:-
Rds On (Max) @ Id, Vgs:34 mOhm @ 30A, 8V
Puissance - Max:470W
Emballage:Bulk
Package / Boîte:Module
Autres noms:TPH3215M
TPH3215M-ND
Température de fonctionnement:-40°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2260pF @ 100V
Charge de la porte (Qg) (Max) @ Vgs:28nC @ 8V
type de FET:2 N-Channel (Half Bridge)
Fonction FET:GaNFET (Gallium Nitride)
Tension drain-source (Vdss):600V
Description détaillée:Mosfet Array 2 N-Channel (Half Bridge) 600V 70A (Tc) 470W Through Hole Module
Courant - Drainage continu (Id) à 25 ° C:70A (Tc)
Email:[email protected]

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