THGAF8T1T83BAIR
Modèle de produit:
THGAF8T1T83BAIR
Fabricant:
Toshiba Memory America, Inc.
La description:
IC FLASH 2T UFS 153VFBGA
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
86819 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
THGAF8T1T83BAIR.pdf

introduction

We can supply THGAF8T1T83BAIR, use the request quote form to request THGAF8T1T83BAIR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number THGAF8T1T83BAIR.The price and lead time for THGAF8T1T83BAIR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# THGAF8T1T83BAIR.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-THGAF8T1T83BAIR
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Écrire le temps de cycle - Word, Page:-
Tension - Alimentation:2.7 V ~ 3.6 V
La technologie:FLASH - NAND
Package composant fournisseur:153-VFBGA (11.5x13)
Séries:Consumer UFS
Emballage:Tray
Package / Boîte:153-VFBGA
Autres noms:THGAF8T1T83BAIRYGJ
Température de fonctionnement:-25°C ~ 85°C (TC)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Type de mémoire:Non-Volatile
Taille mémoire:2Tb (256G x 8)
Interface mémoire:UFS
Format de mémoire:FLASH
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Description détaillée:FLASH - NAND Memory IC 2Tb (256G x 8) UFS 153-VFBGA (11.5x13)
Email:[email protected]

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