HS1M R3G
HS1M R3G
Modèle de produit:
HS1M R3G
Fabricant:
TSC (Taiwan Semiconductor)
La description:
DIODE GEN PURP 1KV 1A DO214AC
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
89059 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
HS1M R3G.pdf

introduction

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Spécifications

Numéro de pièce interne RO-HS1M R3G
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - directe (Vf) (max) @ Si:1.7V @ 1A
Tension - inverse (Vr) (max):1000V
Package composant fournisseur:DO-214AC (SMA)
La vitesse:Fast Recovery = 200mA (Io)
Séries:-
Temps de recouvrement inverse (trr):75ns
Emballage:Original-Reel®
Package / Boîte:DO-214AC, SMA
Autres noms:HS1M R3GDKR
HS1M R3GDKR-ND
HS1MR3GDKR
Température d'utilisation - Jonction:-55°C ~ 150°C
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:17 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Standard
Description détaillée:Diode Standard 1000V 1A Surface Mount DO-214AC (SMA)
Courant - fuite, inverse à Vr:5µA @ 1000V
Courant - Rectifié moyenne (Io):1A
Capacité à Vr, F:20pF @ 4V, 1MHz
Email:[email protected]

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