PDTC124XS,126
PDTC124XS,126
Osa numero:
PDTC124XS,126
Valmistaja:
NXP Semiconductors / Freescale
Kuvaus:
TRANS PREBIAS NPN 500MW TO92-3
RoHS-tila:
Lyijytön / RoHS -yhteensopiva
Määrä varastossa:
39150 Pieces
Toimitusaika:
1-2 days (We have stocks to ship now)
Tuotantoaika:
4-8 weeks
Tietolomake:
PDTC124XS,126.pdf

esittely

We can supply PDTC124XS,126, use the request quote form to request PDTC124XS,126 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PDTC124XS,126.The price and lead time for PDTC124XS,126 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PDTC124XS,126.We look forward to working with you to establish long-term relations of cooperation

tekniset tiedot

Sisäinen osanumero RO-PDTC124XS,126
Kunto Original New
Maa alkuperä Contact us
Alkuun Merkintä email us
Korvaus See datasheet
Jännite - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
transistori tyyppi:NPN - Pre-Biased
Toimittaja Device Package:TO-92-3
Sarja:-
Vastus - emitteripohja (R2):47 kOhms
Vastus - pohja (R1):22 kOhms
Virta - Max:500mW
Pakkaus:Tape & Box (TB)
Pakkaus / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Muut nimet:934057571126
PDTC124XS AMO
PDTC124XS AMO-ND
Asennustyyppi:Through Hole
Kosteuden herkkyys (MSL):1 (Unlimited)
Lyijytön tila / RoHS-tila:Lead free / RoHS Compliant
Yksityiskohtainen kuvaus:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3
DC Nykyinen Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5V
Nykyinen - Collector Cutoff (Max):1µA
Nykyinen - Collector (le) (Max):100mA
Perusosan osanumero:PDTC124
Email:[email protected]

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