PDTC114TE,115
PDTC114TE,115
Osa numero:
PDTC114TE,115
Valmistaja:
NXP Semiconductors / Freescale
Kuvaus:
TRANS PREBIAS NPN 150MW SC75
RoHS-tila:
Lyijytön / RoHS -yhteensopiva
Määrä varastossa:
40749 Pieces
Toimitusaika:
1-2 days (We have stocks to ship now)
Tuotantoaika:
4-8 weeks
Tietolomake:
PDTC114TE,115.pdf

esittely

We can supply PDTC114TE,115, use the request quote form to request PDTC114TE,115 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PDTC114TE,115.The price and lead time for PDTC114TE,115 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PDTC114TE,115.We look forward to working with you to establish long-term relations of cooperation

tekniset tiedot

Sisäinen osanumero RO-PDTC114TE,115
Kunto Original New
Maa alkuperä Contact us
Alkuun Merkintä email us
Korvaus See datasheet
Jännite - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
transistori tyyppi:NPN - Pre-Biased
Toimittaja Device Package:SC-75
Sarja:-
Vastus - pohja (R1):10 kOhms
Virta - Max:150mW
Pakkaus:Tape & Reel (TR)
Pakkaus / Case:SC-75, SOT-416
Muut nimet:568-11055-2
934051780115
PDTC114TE T/R
PDTC114TE T/R-ND
PDTC114TE,115-ND
Asennustyyppi:Surface Mount
Kosteuden herkkyys (MSL):1 (Unlimited)
Lyijytön tila / RoHS-tila:Lead free / RoHS Compliant
Yksityiskohtainen kuvaus:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75
DC Nykyinen Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 5V
Nykyinen - Collector Cutoff (Max):100nA (ICBO)
Nykyinen - Collector (le) (Max):100mA
Perusosan osanumero:PDTC114
Email:[email protected]

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