TSM150P03PQ33 RGG
TSM150P03PQ33 RGG
Artikelnummer:
TSM150P03PQ33 RGG
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET P-CH 30V 36A 8PDFN
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
47164 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TSM150P03PQ33 RGG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-TSM150P03PQ33 RGG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-PDFN (3x3)
Serie:-
Rds On (Max) @ Id, Vgs:15 mOhm @ 10A, 10V
Verlustleistung (max):27.8W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerWDFN
Andere Namen:TSM150P03PQ33 RGGTR
TSM150P03PQ33 RGGTR-ND
TSM150P03PQ33RGGTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1829pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:29.3nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:P-Channel 30V 36A (Tc) 27.8W (Tc) Surface Mount 8-PDFN (3x3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:36A (Tc)
Email:[email protected]

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