TC58CYG2S0HRAIG
Artikelnummer:
TC58CYG2S0HRAIG
Hersteller:
Toshiba Memory America, Inc.
Beschreibung:
4GB SERIAL NAND 24NM WSON 1.8V
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
83074 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TC58CYG2S0HRAIG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-TC58CYG2S0HRAIG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Schreibzyklus Zeit - Wort, Seite:-
Spannungsversorgung:1.7 V ~ 1.95 V
Technologie:FLASH - NAND (SLC)
Supplier Device-Gehäuse:8-WSON (6x8)
Serie:-
Verpackung / Gehäuse:8-WDFN Exposed Pad
Betriebstemperatur:-40°C ~ 85°C
Befestigungsart:Surface Mount
Speichertyp:Non-Volatile
Speichergröße:4Gb (512M x 8)
Speicherschnittstelle:SPI
Speicherformat:FLASH
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) SPI 104MHz 8-WSON (6x8)
Uhrfrequenz:104MHz
Email:[email protected]

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