SUP90330E-GE3
SUP90330E-GE3
Artikelnummer:
SUP90330E-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 200V 35.8A TO220AB
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
68846 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
SUP90330E-GE3.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-SUP90330E-GE3
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220AB
Serie:ThunderFET®
Rds On (Max) @ Id, Vgs:37.5 mOhm @ 12.2A, 10V
Verlustleistung (max):125W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1172pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):7.5V, 10V
Drain-Source-Spannung (Vdss):200V
detaillierte Beschreibung:N-Channel 200V 35.8A (Tc) 125W (Tc) Through Hole TO-220AB
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:35.8A (Tc)
Email:[email protected]

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