RGW00TS65GC11
RGW00TS65GC11
Artikelnummer:
RGW00TS65GC11
Hersteller:
LAPIS Semiconductor
Beschreibung:
650V 50A FIELD STOP TRENCH IGBT
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
86911 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
RGW00TS65GC11.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-RGW00TS65GC11
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):650V
VCE (on) (Max) @ Vge, Ic:1.9V @ 15V, 50A
Testbedingung:400V, 50A, 10 Ohm, 15V
Td (ein / aus) bei 25 ° C:52ns/180ns
Schaltenergie:1.18mJ (on), 960µJ (off)
Supplier Device-Gehäuse:TO-247N
Serie:-
Leistung - max:254W
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-40°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:15 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:Trench Field Stop
Gate-Ladung:141nC
detaillierte Beschreibung:IGBT Trench Field Stop 650V 96A 254W Through Hole TO-247N
Strom - Collector Pulsed (Icm):200A
Strom - Kollektor (Ic) (max):96A
Email:[email protected]

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