RGTV60TK65GVC11
RGTV60TK65GVC11
Artikelnummer:
RGTV60TK65GVC11
Hersteller:
LAPIS Semiconductor
Beschreibung:
650V 30A FIELD STOP TRENCH IGBT
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
41576 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
RGTV60TK65GVC11.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-RGTV60TK65GVC11
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):650V
VCE (on) (Max) @ Vge, Ic:1.9V @ 15V, 30A
Testbedingung:400V, 30A, 10 Ohm, 15V
Td (ein / aus) bei 25 ° C:33ns/105ns
Schaltenergie:570µJ (on), 500µJ (off)
Supplier Device-Gehäuse:TO-3PFM
Serie:-
Leistung - max:76W
Verpackung / Gehäuse:TO-3PFM, SC-93-3
Betriebstemperatur:-40°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:15 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:Trench Field Stop
Gate-Ladung:64nC
detaillierte Beschreibung:IGBT Trench Field Stop 650V 33A 76W Through Hole TO-3PFM
Strom - Collector Pulsed (Icm):120A
Strom - Kollektor (Ic) (max):33A
Email:[email protected]

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