RF1005TF6S
RF1005TF6S
Artikelnummer:
RF1005TF6S
Hersteller:
LAPIS Semiconductor
Beschreibung:
DIODE GEN PURP 600V 10A TO220NFM
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
79914 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
RF1005TF6S.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-RF1005TF6S
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Forward (Vf) (Max) @ If:1.7V @ 10A
Spannung - Sperr (Vr) (max):600V
Supplier Device-Gehäuse:TO-220NFM
Geschwindigkeit:Fast Recovery = 200mA (Io)
Serie:-
Rückwärts-Erholzeit (Trr):40ns
Verpackung:Tube
Verpackung / Gehäuse:TO-220-2 Full Pack
Betriebstemperatur - Anschluss:150°C (Max)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Diodentyp:Standard
detaillierte Beschreibung:Diode Standard 600V 10A Through Hole TO-220NFM
Strom - Sperrleckstrom @ Vr:10µA @ 600V
Strom - Richt (Io):10A
Kapazität @ Vr, F:-
Email:[email protected]

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