PMDPB38UNE,115
PMDPB38UNE,115
Artikelnummer:
PMDPB38UNE,115
Hersteller:
NXP Semiconductors / Freescale
Beschreibung:
MOSFET 2N-CH 20V 4A HUSON6
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
63637 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
PMDPB38UNE,115.pdf

Einführung

We can supply PMDPB38UNE,115, use the request quote form to request PMDPB38UNE,115 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PMDPB38UNE,115.The price and lead time for PMDPB38UNE,115 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PMDPB38UNE,115.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-PMDPB38UNE,115
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:DFN2020-6
Serie:-
Rds On (Max) @ Id, Vgs:46 mOhm @ 3A, 4.5V
Leistung - max:510mW
Verpackung:Original-Reel®
Verpackung / Gehäuse:6-UDFN Exposed Pad
Andere Namen:568-10757-6
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:268pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:4.4nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 4A 510mW Surface Mount DFN2020-6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A
Email:[email protected]

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