Interne Teilenummer | RO-PBRN123YS,126 |
---|---|
Bedingung | Original New |
Herkunftsland | Contact us |
Top-Markierung | email us |
Ersatz | See datasheet |
Spannung - Kollektor-Emitter-Durchbruch (max): | 40V |
VCE Sättigung (Max) @ Ib, Ic: | 1.15V @ 8mA, 800mA |
Transistor-Typ: | NPN - Pre-Biased |
Supplier Device-Gehäuse: | TO-92-3 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 2.2 kOhms |
Leistung - max: | 700mW |
Verpackung: | Tape & Box (TB) |
Verpackung / Gehäuse: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andere Namen: | 934059138126 PBRN123YS AMO PBRN123YS AMO-ND |
Befestigungsart: | Through Hole |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 800mA 700mW Through Hole TO-92-3 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 500 @ 300mA, 5V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 800mA |
Basisteilenummer: | PBRN123 |
Email: | [email protected] |