NGTG20N60L2TF1G
NGTG20N60L2TF1G
Artikelnummer:
NGTG20N60L2TF1G
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 40A 64W TO-3PF
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
76282 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NGTG20N60L2TF1G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NGTG20N60L2TF1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE (on) (Max) @ Vge, Ic:1.65V @ 15V, 20A
Testbedingung:300V, 20A, 30 Ohm, 15V
Td (ein / aus) bei 25 ° C:60ns/193ns
Schaltenergie:-
Serie:-
Leistung - max:64W
Verpackung:Tube
Verpackung / Gehäuse:TO-3P-3 Full Pack
Andere Namen:NGTG20N60L2TF1GOS
Betriebstemperatur:175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:4 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:-
Gate-Ladung:84nC
detaillierte Beschreibung:IGBT 600V 40A 64W Through Hole
Strom - Collector Pulsed (Icm):105A
Strom - Kollektor (Ic) (max):40A
Email:[email protected]

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