GP2M012A060H
GP2M012A060H
Artikelnummer:
GP2M012A060H
Hersteller:
Global Power Technologies Group
Beschreibung:
MOSFET N-CH 600V 12A TO220
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
30822 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
GP2M012A060H.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-GP2M012A060H
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220
Serie:-
Rds On (Max) @ Id, Vgs:650 mOhm @ 6A, 10V
Verlustleistung (max):231W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-220-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 12A (Tc) 231W (Tc) Through Hole TO-220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12A (Tc)
Email:[email protected]

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