DTC124EUBHZGTL
DTC124EUBHZGTL
Artikelnummer:
DTC124EUBHZGTL
Hersteller:
LAPIS Semiconductor
Beschreibung:
NPN 100MA 50V DIGITAL TRANSISTOR
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
51438 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.DTC124EUBHZGTL.pdf2.DTC124EUBHZGTL.pdf

Einführung

We can supply DTC124EUBHZGTL, use the request quote form to request DTC124EUBHZGTL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DTC124EUBHZGTL.The price and lead time for DTC124EUBHZGTL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DTC124EUBHZGTL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-DTC124EUBHZGTL
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VCE Sättigung (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Transistor-Typ:NPN - Pre-Biased + Diode
Supplier Device-Gehäuse:UMT3F
Serie:Automotive, AEC-Q101
Widerstand - Emitterbasis (R2):22 kOhms
Widerstand - Basis (R1):22 kOhms
Leistung - max:200mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:SC-85
Andere Namen:DTC124EUBHZGTLCT
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:7 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:250MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3F
DC Stromgewinn (HFE) (Min) @ Ic, VCE:56 @ 5mA, 5V
Strom - Collector Cutoff (Max):-
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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