APTGT50H60RT3G
APTGT50H60RT3G
Artikelnummer:
APTGT50H60RT3G
Hersteller:
Microsemi
Beschreibung:
POWER MOD IGBT3 FULL BRIDGE SP3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
32474 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
APTGT50H60RT3G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-APTGT50H60RT3G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE (on) (Max) @ Vge, Ic:1.9V @ 15V, 50A
Supplier Device-Gehäuse:SP3
Serie:-
Leistung - max:176W
Verpackung / Gehäuse:SP3
Betriebstemperatur:-
NTC-Thermistor:Yes
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingangskapazität (Cíes) @ VCE:3.15nF @ 25V
Eingang:Single Phase Bridge Rectifier
IGBT-Typ:Trench Field Stop
detaillierte Beschreibung:IGBT Module Trench Field Stop Full Bridge Inverter 600V 80A 176W Chassis Mount SP3
Strom - Collector Cutoff (Max):250µA
Strom - Kollektor (Ic) (max):80A
Konfiguration:Full Bridge Inverter
Email:[email protected]

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