Deutsch
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Suomi Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Svenska Ελλάδα Български език✕
Über uns | Kontakt | Angebot anfordern |
Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-IGBTs-Einzel > APT70GR65B2DU40
APT70GR65B2DU40
Artikelnummer:
APT70GR65B2DU40
Hersteller:
Microsemi
Beschreibung:
INSULATED GATE BIPOLAR TRANSISTO
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
34369 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
APT70GR65B2DU40.pdf
Anfrage

Einführung

We can supply APT70GR65B2DU40, use the request quote form to request APT70GR65B2DU40 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT70GR65B2DU40.The price and lead time for APT70GR65B2DU40 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT70GR65B2DU40.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-APT70GR65B2DU40
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):650V
VCE (on) (Max) @ Vge, Ic:2.4V @ 15V, 70A
Testbedingung:433V, 70A, 4.3 Ohm, 15V
Td (ein / aus) bei 25 ° C:18ns/170ns
Supplier Device-Gehäuse:T-MAX™ [B2]
Serie:-
Leistung - max:595W
Verpackung:Bulk
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:28 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:NPT
Gate-Ladung:305nC
detaillierte Beschreibung:IGBT NPT 650V 134A 595W Through Hole T-MAX™ [B2]
Strom - Collector Pulsed (Icm):280A
Strom - Kollektor (Ic) (max):134A
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung

In Verbindung stehende Teile für APT70GR65B2DU40

Image Artikelnummer Hersteller Beschreibung Aussicht
APT6M100K Microsemi MOSFET N-CH 1000V 6A TO-220 Anfrage
APT75DQ120BG Image APT75DQ120BG Microsemi DIODE GEN PURP 1.2KV 75A TO247 Anfrage
APT70GR65B2SCD30 Microsemi INSULATED GATE BIPOLAR TRANSISTO Anfrage
APT70GR120J Image APT70GR120J Microsemi IGBT 1200V 112A 543W SOT227 Anfrage
APT75DQ100BG Image APT75DQ100BG Microsemi Corporation DIODE GEN PURP 1KV 75A TO247 Anfrage
APT70SM70J Microsemi POWER MOSFET - SIC Anfrage
APT70SM70B Microsemi POWER MOSFET - SIC Anfrage
APT75DL60HJ Image APT75DL60HJ Microsemi MOD DIODE 600V SOT-227 Anfrage
APT68GA60LD40 Image APT68GA60LD40 Microsemi IGBT 600V 121A 520W TO-264 Anfrage
APT70SM70S Microsemi POWER MOSFET - SIC Anfrage
APT70GR120JD60 Image APT70GR120JD60 Microsemi IGBT 1200V 112A 543W SOT227 Anfrage
APT75DQ60BG Image APT75DQ60BG Microsemi DIODE GEN PURP 600V 75A TO247 Anfrage
APT75DL120HJ Image APT75DL120HJ Microsemi MOD DIODE 1200V SOT-227 Anfrage
APT70GR65B Image APT70GR65B Microsemi IGBT 650V 134A 595W TO-247 Anfrage
APT75DF170HJ Image APT75DF170HJ Microsemi MOD DIODE 1700V SOT-227 Anfrage
APT70GR120B2 Image APT70GR120B2 Microsemi IGBT 1200V 160A 961W TO247 Anfrage
APT70GR120L Image APT70GR120L Microsemi IGBT 1200V 160A 961W TO264 Anfrage
APT68GA60B Image APT68GA60B Microsemi IGBT 600V 121A 520W TO-247 Anfrage
APT68GA60B2D40 Image APT68GA60B2D40 Microsemi IGBT 600V 121A 520W TO-247 Anfrage
APT66M60L Image APT66M60L Microsemi MOSFET N-CH 600V 70A TO-264 Anfrage

läst Nachrichten