APT10045B2LLG
APT10045B2LLG
Artikelnummer:
APT10045B2LLG
Hersteller:
Microsemi
Beschreibung:
MOSFET N-CH 1000V 23A T-MAX
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
82018 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.APT10045B2LLG.pdf2.APT10045B2LLG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-APT10045B2LLG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 2.5mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:T-MAX™ [B2]
Serie:POWER MOS 7®
Rds On (Max) @ Id, Vgs:450 mOhm @ 11.5A, 10V
Verlustleistung (max):565W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3 Variant
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:154nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 23A (Tc) 565W (Tc) Through Hole T-MAX™ [B2]
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:23A (Tc)
Email:[email protected]

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