AOI7N65
AOI7N65
Artikelnummer:
AOI7N65
Hersteller:
Alpha and Omega Semiconductor, Inc.
Beschreibung:
MOSFET N-CH 650V 7A TO251A
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
48640 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.AOI7N65.pdf2.AOI7N65.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-AOI7N65
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-251A
Serie:-
Rds On (Max) @ Id, Vgs:1.56 Ohm @ 3.5A, 10V
Verlustleistung (max):178W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Stub Leads, IPak
Andere Namen:785-1453-5
Betriebstemperatur:-50°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 7A (Tc) 178W (Tc) Through Hole TO-251A
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7A (Tc)
Email:[email protected]

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