AO4202_120
AO4202_120
Artikelnummer:
AO4202_120
Hersteller:
Alpha and Omega Semiconductor, Inc.
Beschreibung:
MOSFET N-CH 8SOIC
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
86636 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
AO4202_120.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-AO4202_120
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.3V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOIC
Serie:-
Rds On (Max) @ Id, Vgs:5.3 mOhm @ 19A, 10V
Verlustleistung (max):3.1W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
Typ FET:N-Channel
FET-Merkmal:Schottky Diode (Body)
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 19A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:19A (Ta)
Email:[email protected]

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