ALD212914PAL
ALD212914PAL
Artikelnummer:
ALD212914PAL
Hersteller:
Advanced Linear Devices, Inc.
Beschreibung:
MOSFET 2N-CH 10.6V 0.08A 8DIP
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
36514 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
ALD212914PAL.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-ALD212914PAL
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:20mV @ 10µA
Supplier Device-Gehäuse:8-PDIP
Serie:EPAD®, Zero Threshold™
Rds On (Max) @ Id, Vgs:-
Leistung - max:500mW
Verpackung:Tube
Verpackung / Gehäuse:8-DIP (0.300", 7.62mm)
Betriebstemperatur:-
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:8 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Dual) Matched Pair
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):10.6V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 80mA 500mW Through Hole 8-PDIP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:80mA
Email:[email protected]

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